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WS2-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

tungsten disulfide

Type
Formula WS2
Role
4

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain
5

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Source
charge carrier density

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Applications

Area Application Source
electronics

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Characterization

Method Source
other

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten disulfide on SiO2/Si substrate
Product

WS2-based field-effect transistor

References

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