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back-gated field-effect transistor based on multilayered MoS2

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayered MoS2 flakes

multilayer MoS2 flakes MoS2 multilayers multilayer MoS2 10L MoS2 flakes ML MoS2 flakes MoS2 flakes 2D MoS2 ML MoS2
Type Nano Material
Formula
Role channel layer
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • silica/silicon
Product

back-gated field-effect transistor based on multilayered MoS2

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silica/silicon
  • molybdenum suboxide
Product

back-gated field-effect transistor based on multilayered MoS2

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silica/silicon
  • molybdenum suboxide
Product

back-gated field-effect transistor based on multilayered MoS2

References

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