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FLC/h-BN/WSe2 heterostructure device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few layer graphene

few-layer graphene FLG
Type
Formula
Role
4

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
5

tungsten(IV) selenide monolayer

tungsten diselenide nanosheets tungsten diselenide monolayers tungsten diselenide monolayer monolayer tungsten diselenide tungsten selenide nanosheets WSe2 single layer nanosheets tungsten selenide monolayer monolayer tungsten selenide tungsten selenide nanosheet monolayer WSe2 nanosheets monolayer WSe2 nanoflakes monolayer WSe2 nanoplates one layer WSe2 nanoflakes suspended WSe2 monolayers suspended WSe2 nanosheets monolayer WSe2 crystals monolayer WSe2 flakes single-layer WSe2 ce-WS2 nanosheets WSe2 monolayers WSe2 nanosheets MoSe2 monolayer WSe2 nanoflakes monolayer MoS2 monolayer WSe2 WSe2 monolayer WS2 monolayer WSe2 flake 1-L WSe2 ML-WSe2
Type
Formula
Role
6

Cr/Au

Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
applied voltage

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gold
  • Si wafer
  • chromium
Product

FLC/h-BN/WSe2 heterostructure device

References

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