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back-gated field-effect transistor based on thin Zn-doped MoS2 film

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bilayer zinc-doped MoS2

bilayer zinc-doped MoS2 Zn-doped MoS2 film Zn-doped MoS2 Zn-MoS2 film Zn:MoS2 film
Type Nano Material
Formula
Role channel layer
4

titanium/gold film

Type Nano Material
Formula
Role source
5

titanium/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on preparation conditions

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. DjFf9HuBCW0guEtozoEKzOA
  2. aa8fWt6fZbFIx5s0APPqfZs5BMBZ8PcXIVW1Uly
  3. tTvoeGyr6xN9sG5Axx30r198K
Product

back-gated field-effect transistor based on thin Zn-doped MoS2 film

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. eAUmSc08snYL8GgxypGQn8l
  2. XxQF5s6yrIOKWui0kqmULaNZ1cyOQjZ5Lq5EZB2
  3. H0qNebtyR4XP3aBIo6eQe8eDx
Product

back-gated field-effect transistor based on thin Zn-doped MoS2 film

References

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