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back-gated field-effect transistor based on Zn-doped MoS2 monolayer film

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer zinc-doped MoS2

Zn-doped MoS2 thin film Zn-doped MoS2 monolayer Zn-doped MoS2 film Zn-doped MoS2 Zn-MoS2 film Zn:MoS2 film
Type Nano Material
Formula
Role channel layer
4

titanium/gold film

Type Nano Material
Formula
Role source
5

titanium/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
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  2. IJLmERvWFyJBOW9y3nC2pee4nzb6CH8Vaj6Eqtr
  3. OUOsa0WmPd78q6oRkFjR5K7BY
Product

back-gated field-effect transistor based on Zn-doped MoS2 monolayer film

References

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