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back-gated FET device on Zn-doped MoS2 monolayer

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Zn-doped MoS2 thin film

Zn-doped MoS2 thin film bilayer zinc-doped MoS2 Zn-doped MoS2 monolayer Zn-doped MoS2 film Zn-doped MoS2 Zn-MoS2 film Zn:MoS2 film
Type Nano Material
Formula
Role channel layer
4

titanium/gold film

Type Nano Material
Formula
Role source
5

titanium/gold film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. a8XmN4ByP8Pr1Z68vTnguSl
  2. 42EtkZN9KKUuin4jSaeXpWEFHiWN69K1J0fhbCy
  3. QW7pLmrqLejl7Wb2VaqmLI5H8
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. WFe2I9Ea71zhxxHfc251uya
  2. MD5ZIDvEGuCaSKCdrpNfxbKRDfmmRvPtuM0YgsH
  3. a9Ph1USav8goOM94UHpKWvYly
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silica/silicon
See all (4)
  1. mtBq4CV9TcFObLjZXEZ2V45
  2. zyturRa0bhGUEh7hfVrNbQXD5sYDjoRSpCFlNF8
  3. g8obucdufVo3YPAuYNESyG51G
Product

back-gated FET device on Zn-doped MoS2 monolayer

Size: not specified

Medium/Support: none

References

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