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Pd/Ta2O5/TaOx/Pd memristor-Pd/Ag/HfOx/Ag/Pd bidirectional threshold switching selector combined cell

Based on

1 Articles
2017 Most recent source

Composition

1

palladium

Type Single Compound
Formula Pd
Role electrodes
2

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type
Formula Ta2O5
Role
3

oxygen deficient tantalum oxide

tantalum suboxide tantalum oxide TaO2-x TaOx TaOy TaOx
Type
Formula TaO(x)
Role
4

palladium

Type Single Compound
Formula Pd
Role electrodes
5

silver

Type
Formula Ag
Role
6

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role dielectric layer
7

palladium

Type Single Compound
Formula Pd
Role electrodes
8

p-type silicon

Type Complex Compound
Formula
Role substrate
9

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
10

tantalum

Type Single Compound
Formula Ta
Role adhesion layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on cycle number

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

Pd/Ta2O5/TaOx/Pd memristor-Pd/Ag/HfOx/Ag/Pd bidirectional threshold switching selector combined cell

Size: not specified

Medium/Support: none

References

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