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multilayer hexagonal boron nitride-based resistive random access memory device

Based on

1 Articles
2017 Most recent source

Composition

1

copper

Type Single Compound
Formula Cu
Role bottom electrode
2

multilayer hexagonal boron nitride

multilayer h-BN stacks h-BN nanosheets multilayer h-BN
Type
Formula
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source
cumulative distribution of resistance per cycle in high resistive state

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Applications

Area Application Source
data storage

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. voRIduVOPG3sugBOuHp
Product

multilayer hexagonal boron nitride-based resistive random access memory device

Method 2

Type: Physical formation
Source:
Starting materials
  1. BkbOLP7j8bIpUhf18Ml
Product

multilayer hexagonal boron nitride-based resistive random access memory device

References

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