Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

multilayer hexagonal boron nitride-based resistive random access memory device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium

Type
Formula Ti
Role
4

gold film

Type Nano Material
Formula
Role bottom electrode
5

multilayer graphene

MLG sheets MLG
Type Nano Material
Formula
Role blocking layer
6

multilayer hexagonal boron nitride

multilayer h-BN stacks thin h-BN sheets h-BN nanosheets multilayer h-BN
Type
Formula
Role
7

multilayer graphene

MLG sheets MLG
Type Nano Material
Formula
Role blocking layer
8

titanium

Type
Formula Ti
Role
9

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cumulative distribution of resistance per cycle in high resistive state

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • titanium
  • silica/silicon
Product

multilayer hexagonal boron nitride-based resistive random access memory device

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial