Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

vertical transistor memory device

Based on

1 Articles
2017 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

chromium

Type Single Compound
Formula Cr
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role gate
4

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
5

poly(2-vinylnaphthalene)

PVN
Type Polymer
Formula
Role chargeable electret polymer layer
6

poly(N-alkyl-diketopyrrolo-pyrrole dithienylthieno [3, 2-b] thiophene)

DPP-DTT
Type Polymer
Formula
Role ambipolar polymer layer
7

copper

Type Single Compound
Formula Cu
Role source
8

lithium fluoride

Type Single Compound
Formula LiF
Role insulating layer
9

pentacene

PEN Pen Pc Pe
Type Single Compound
Formula C22H14
Role unipolar polymer layer
10

copper

Type Single Compound
Formula Cu
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 32dgW8r3rgwGSbdZ9X
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. yzlLS3d0zjSeNSbdjX
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. QLax00i4T1Fh2Q6Vyh
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. TQ9Z2sNA7ouo5XIcKT
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. cLi2j7tksGmD26TapQ
Product

vertical transistor memory device

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial