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resistive switching memory device

Based on

1 Articles
2017 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role electrodes
2

hexagonal boron nitride film

hBN film
Type
Formula
Role
3

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role electrodes
4

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on voltage sweep direction

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. dSC4ondOWd6AbCZCKdFvg4Wsk
Product

resistive switching memory device

Size: not specified

Medium/Support: none

References

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