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Mott-field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

SiO2/p++-Si

Type Complex Compound
Formula
Role substrate
2

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
3

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain
4

3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl(triethoxy)silane

1-(heptadecafluoro-1,1,2,2-tetrahydrodecyl)triethoxysilane (heptadecafluoro-1,1,2,2-tetrahydrodecyl)triethoxysilane heptadecafluoro-1,1,2,2- tetrahydrodecyl-triethoxysilane heptadecafluoro-1,1,2,2-tetrahydrodecyl-triethoxysilane 1,1,2,2-tetrahydroperfluorodecyltriethoxysilane 1H,1H,2H,2H-perfluorodecyltriethoxysilane 1H,1H,2H,2Hperfluorodecyltriethoxysilane [2-(perfluorooctyl)ethyl]triethoxysilane PFDTS PDTES FTDS PDES PDTS PFES
Type
Formula (C2H5O)3Si(CH2)2C8F17
Role
5

κ-(BEDT-TTF)2CuN(CN)2Cl film

Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
Arrhenius plot of sheet conductivity dependent on gate voltage

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/p++-Si
Product

Mott-field-effect transistor

References

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