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SWCNT-MoS2-SWCNT vertical point heterostructure-based complementary metal-oxide-semiconductor device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon/silica

Type
Formula
Role
2

single-walled carbon nanotubes

SWCNT
Type
Formula
Role
3

single-walled carbon nanotubes

single walled carbon nanotubes single-walled carbon nanotube single walled carbon nanotube single-wall carbon nanotubes single-wall carbon nanotube carbon nanotubes SWCNT SWNT CNT
Type
Formula
Role
4

multilayer MoS2

2D MoS2
Type
Formula
Role
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain
6

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film Au/Ti bilayer titanium/gold Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Biological effects

Preparation

References

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