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Si/SiO2/c-OBCB:SWNT/Pd FET

Based on

1 Articles
2017 Most recent source

Composition

1

heavily doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

octabenzocircumbiphenyl-sorted single-walled carbon nanotubes

c-OBCB-sorted SWNT
Type
Formula
Role
4

palladium

Type Single Compound
Formula Pd
Role source
5

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
hole mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped Si
Product

Si/SiO2/c-OBCB:SWNT/Pd FET

References

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