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back-gated germanium nanowire Schottky barrier transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

example of nanowire

germanium nanowire Ge NW
Type Nano Material
Formula
Role channels
3

nickel germanide

Type Single Compound
Formula Ni2Ge
Role drain
4

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide alumina a-Al2O3
Type Single Compound
Formula Al2O3
Role dielectric layer
5

substoichiometric germanium oxide

germanium partially oxidized germanium suboxide germanium oxide GeOx (x < 2) Ge oxide
Type Single Compound
Formula GeOx
Role interface passivation layer
6

nickel germanide

Type Single Compound
Formula Ni2Ge
Role source
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. CYpEBZdnAT6u11FSVmUA
  2. I9OP1RGZrQ7SLa9oRvO7D6O3
  3. Bp813R
  4. WVvg2k
Product

back-gated germanium nanowire Schottky barrier transistor

References

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