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InSb/Ga0.15In0.85Sb/InSb nanowire device

Based on

1 Articles
2017 Most recent source

Composition

1

SiO2-covered p-doped Si

silica/silicon
Type Complex Compound
Formula
Role substrate
2

titanium/gold nanoribbon

Type
Formula
Role
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

one-dimensional InSb/GaxIn1-xSb/InSb axial heterostructure

InSb-Ga0.15In0.85Sb-InSb axial nanowire heterostructure InSb/GaxIn1-xSb/InSb nanowire heterostructure InSb nanowire with GaxIn1-xSb axial segment InSb nanowire with built-in GaxIn1-xSb InSb/GaxIn1-xSb/InSb nanowire
Type Nano Material
Formula
Role channel layer
5

chromium/gold film

Au/Cr film Cr/Au film gold film Au film
Type Nano Material
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
electric current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2-covered p-doped Si
  1. EK2xEY9
  2. uuAljx
Product

InSb/Ga0.15In0.85Sb/InSb nanowire device

References

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