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field-effect transistor based on SWCNT-MoS2-SWCNT vertical point heterostructure

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

SWCNT-MoS2-SWCNT vertical point heterostructure

heterostructure with 1D SWCNT and 2D MoS2 SWCNT-MoS2-SWCNT VPH
Type Nano Material
Formula
Role channel layer
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
5

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for visible light

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

field-effect transistor based on SWCNT-MoS2-SWCNT vertical point heterostructure

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

field-effect transistor based on SWCNT-MoS2-SWCNT vertical point heterostructure

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

field-effect transistor based on SWCNT-MoS2-SWCNT vertical point heterostructure

Size: not specified

Medium/Support: none

References

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