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metal/semiconductor tunnel junction integrated aluminium gallium nitride nanowire UV-light emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role bottom contact
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

silicon

Type Single Compound
Formula Si
Role substrate
4

metal/semiconductor tunnel junction integrated AlGaN nanowires

Type Nano Material
Formula
Role photoactive layer
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role top contact
7

Ti/Al/Ti/Au stack

Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • gallium
  • nitrogen
  1. ghKWMuT
Product

metal/semiconductor tunnel junction integrated aluminium gallium nitride nanowire UV-light emitting diode

Size: not specified

Medium/Support: none

References

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