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InAs nanowire-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

P-doped silicon

P-doped silicon
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium arsenide nanowires

InAs nanowires InAs NW
Type Nano Material
Formula
Role channels
4

Ni/Au film

Type Nano Material
Formula
Role source
5

Ni/Au film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
activation energy barrier dependent on polarization charge density

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

InAs nanowire-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

InAs nanowire-based field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
Product

InAs nanowire-based field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
Product

InAs nanowire-based field-effect transistor

References

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