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resistive switching memory device

Based on

1 Articles
2017 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role electrodes
2

hexagonal boron nitride film

hBN film
Type
Formula
Role
3

few-layer graphene nanosheets

multilayer graphene film multi-layered graphene exfoliated GO graphene graphite nanocrystals multilayered graphene multi-layer graphene graphene multilayers reduced G nanosheets graphene nanosheets multilayer graphene few layer graphene few-layer graphene graphene islands carbon nanowalls graphene sheets nanographene FL-graphene graphene fl-G ml-G FLG MLG CNW ESG
Type Nano Material
Formula
Role electrodes
4

poly(dimethylsiloxane)

polydimethylsiloxane PDMS
Type Polymer
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Source
electric current dependent on labeled surface

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Applications

Area Application Source
data storage

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Characterization

Method Source
UV

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. Xe9l5L6098vcQRsTJiN14ROy7
Product

resistive switching memory device

References

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