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black phosphorus/boron nitride field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride flakes

few-layer hBN flakes
Type
Formula
Role
4

black phosphorus

phosphorus P black black P black-P b-P BP bP
Type
Formula P
Role
5

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role source
6

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film Cr/Au bilayer chromium/gold Au/Cr bilayer gold surface Cr/Au layer Cr-Au film Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  • p-Si/SiO2
Product

black phosphorus/boron nitride field effect transistor

References

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