Loading ...

multilayer HfSe2 field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n++-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer hafnium diselenide flakes

multilayer HfSe2 flakes
Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
air storage stability

More information/entries available to subscribers only.

Or, view sample content

Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. 2FFMNcyavbM
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. M4CLMgAVZu7
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. w3sv88XmJ1I
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. QInqXlLKUcP
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. QGVURRRpCIB
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial