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multilayer HfSe2 field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n++-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer hafnium diselenide flakes

multilayer HfSe2 flakes
Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
air storage stability

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. Xer4rCkjvMV
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. QdkPL8UJ0MD
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. 38NtEryf1X7
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. 1yXpzUoq6vx
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. mvH5EReCks0
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

References

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