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h-BN-MoS2-based pressurizing field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

diamond

Type
Formula C
Role
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role gate
4

hexagonal boron nitride nanosheets

h-BN nanosheets
Type Nano Material
Formula
Role gate dielectrics
5

molybdenum sulfide nanosheets

MoS2 nanosheets
Type Nano Material
Formula
Role semiconductor layer
6

titanium

Type
Formula Ti
Role
7

gold

Type
Formula Au
Role
8

platinum

Type
Formula Pt
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • diamond
Product

h-BN-MoS2-based pressurizing field-effect transistor

Size: not specified

Medium/Support: none

References

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