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electric double-layer transistor

Based on

1 Articles
2017 Most recent source

Composition

1

strontium dioxido(oxo)titanium

strontium titanium trioxide strontium titanium oxide strontium titanate STO
Type Single Compound
Formula SrTiO3
Role substrate
2

Al2O3 nanocrystals

Type
Formula
Role
3

PBCO film

Type
Formula
Role
4

YBCO film

Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role electrodes
6

gold

Type Single Compound
Formula Au
Role gate
7

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type Single Compound
Formula C10H20F6N2O5S2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
resistance dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
X-ray absorption near edge fine structure spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

electric double-layer transistor

Size: not specified

Medium/Support: none

References

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