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multilayer HfSe2 field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n++-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

oxygen plasma-treated multilayer hafnium diselenide flakes

oxygen plasma-treated multilayer HfSe2 flakes
Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
air storage stability

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. AFBUcpC8MqR
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. aRXfPNQChmA
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. XmSCLpJy44Z
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • hafnium diselenide
  • SiO2/n++-type Si
  1. ci0gc2qxKpO
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/n++-type Si
  • hafnium diselenide
  1. Et8v6Jq8Fjt
Product

multilayer HfSe2 field effect transistor

Size: not specified

Medium/Support: none

References

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