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InGaN nanowire/Si tandem cell

Based on

1 Articles
2017 Most recent source

Composition

1

n-doped silicon

n+-Si
Type Complex Compound
Formula
Role back field layer
2

n-doped silicon

n-Si
Type Complex Compound
Formula
Role n-type semiconductor layer
3

p-doped silicon

p+-Si
Type Complex Compound
Formula
Role emitter
4

In0.5Ga0.5N/GaN nanowires

InGaN/GaN nanowire array
Type Nano Material
Formula
Role hole blocking layer/photoactive layer

Properties

General physical and chemical properties

Property Value Source
applied-bias-photon-to-current efficiency (ABPE)

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Applications

Area Application Source
electrodes/electrolytes

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon
  • boron dopant coating
Product

InGaN nanowire/Si tandem cell

References

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