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silicon nanowire-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

p-doped silicon

p+ Si
Type
Formula
Role
2

silica membrane

silica film SiO2 layer SiO2 film
Type
Formula
Role
3

100 nm thick silicon nitride layer

100 nm silicon nitride layer silicon nitride membrane silicon nitride film Si3N4 membrane Si3N4 layer Si3N4 film SiNx layer SiNx film
Type
Formula
Role
4

2-(4-pyridylethyl)triethoxysilane-modified silicon nanowires

PETES-modified silicon NW PETES-modified Si NW PETES-modified SiNW
Type
Formula
Role
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Sensor properties

Type of sensor Sensor property Source
compounds sensor for 2,4,6-trinitrotoluene

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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