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logic-memory device

Based on

1 Articles
2017 Most recent source

Composition

1

tantalum/cobalt-iron-boron alloy/magnesia film

Ta/CoFeB/MgO film
Type
Formula
Role
2

SiO2-coated Si

Type
Formula
Role
3

gold/titanium bilayer

titanium-gold layer titanium/gold film Au/Ti bilayer Ti/Au film Ti/Au
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on negative differential resistance (NDR)

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tantalum
  • SiO2-coated Si
  1. P32nJf
Product

logic-memory device

Size: not specified

Medium/Support: none

References

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