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p-Mg0.23Ni0.77O/CsPbBr3 QD/n-Mg0.38Zn0.62O/n+-GaN based perovskite quantum dot light-emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

n-doped gallium nitride

gallium nitride
Type Single Compound
Formula GaN
Role cathode
4

magnesium zinc oxide

Type Single Compound
Formula Mg0.38Zn0.62O
Role electron injection layer
5

perovskite CsPbBr3 quantum dots

perovskite CsPbBr3 QD CsPbBr3 QD
Type Nano Material
Formula
Role emission layer
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role
7

magnesium nickel oxide

Type Single Compound
Formula Mg0.23Ni0.77O
Role hole injection layer
8

gold

Type Single Compound
Formula Au
Role anode
9

cadmium selenide quantum dots

cadmium selenide QD CdSe quantum dots CdSe QD
Type
Formula
Role

Properties

Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride/alumina
  1. GqqYwho
  2. 73Lr62Mmr0hDFWN
  3. 0Y2hyL
Product

p-Mg0.23Ni0.77O/CsPbBr3 QD/n-Mg0.38Zn0.62O/n+-GaN based perovskite quantum dot light-emitting diode

References

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