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BPE-PTCDI NW/Au NR hybrid nanostructure-based phototransistor

Based on

1 Articles
2017 Most recent source

Composition

1

n-doped silicon

n-doped Si
Type Complex Compound
Formula
Role gate
2

octadecyltrimethoxysilane-modified SiO2

OTS-modified SiO2
Type Complex Compound
Formula
Role gate dielectrics
3

Au nanorods-decorated BPE-PTCDI nanowires

BPE-PTCDI NW/Au NR hybrid nanostructures Au NR-decorated BPE-PTCDI NW hybrid BPE-PTCDI NW/Au NR
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge accumulation rate after light on

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Sensor properties

Type of sensor Sensor property Source
light sensor

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • octadecyltrimethoxysilane-modified SiO2/Si
Product

BPE-PTCDI NW/Au NR hybrid nanostructure-based phototransistor

References

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