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p-Mg0.23Ni0.77O/CsPbBr3 QD/n-ZnO/n+-GaN based perovskite quantum dot light-emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

n-doped gallium nitride

gallium nitride
Type Single Compound
Formula GaN
Role cathode
4

zinc oxide

Type Single Compound
Formula ZnO
Role electron injection layer
5

perovskite CsPbBr3 quantum dots

perovskite CsPbBr3 QD CsPbBr3 QD
Type Nano Material
Formula
Role emission layer
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role
7

magnesium nickel oxide

Type Single Compound
Formula Mg0.23Ni0.77O
Role hole injection layer
8

gold

Type Single Compound
Formula Au
Role anode

Properties

General physical and chemical properties

Property Value Source
external quantum efficiency

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Applications

Area Application Source
lighting devices

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Characterization

Biological effects

Preparation

References

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