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graphene nanoribbon-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

heavily doped n++ silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

trimethylchlorosilane moiety

trimethylsilane termisnus trimethylsilane terminus trimethylsilane moiety trimethylsiliyl moiety trimethylsilyl moiety trimethylsilyl group chlorosilane moiety trimethylsilyl TMCS moiety TMS moiety TMS group TMS
Type Single Compound
Formula Si(CH3)3-
Role adhesion layer
4

graphene nanoribbons

acene-type GNR GNR
Type Nano Material
Formula
Role semiconductor layer
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
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  2. UU7KfxwSmszZtmtD
Product

graphene nanoribbon-based field-effect transistor

References

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