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bottom contact-bottom gate organic-inorganic perovskite field-effect transistors

Based on

1 Articles
2016 Most recent source

Composition

1

n-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

phenylethylammonium tin iodide

(C6H5C2H4NH3)2SnI4 PEASnI4
Type Single Compound
Formula C16H24I4N2Sn
Role semiconductor layer
6

APTES iodide moiety

Type Single Compound
Formula -C3H9INO3Si-
Role self-assembling monolayer (SAM)

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si
  • oxygen
Product

bottom contact-bottom gate organic-inorganic perovskite field-effect transistors

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si
  • oxygen
Product

bottom contact-bottom gate organic-inorganic perovskite field-effect transistors

Size: not specified

Medium/Support: none

References

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