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array of resistive random access memory device based on Cr/ZnO:Mn/Mg on Si transistor array

Based on

1 Articles
2017 Most recent source

Composition

1

poly(pyromellitic dianhydride-co-4,4'-oxydianiline)/silica

Type Complex Compound
Formula
Role substrate
2

single crystalline silicon

monocrystalline silicon silicon
Type Single Compound
Formula Si
Role channel layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

chromium

Type Single Compound
Formula Cr
Role source
5

chromium

Type Single Compound
Formula Cr
Role drain
6

chromium

Type Single Compound
Formula Cr
Role gate
7

chromium

Type Single Compound
Formula Cr
Role bottom electrode of memory device
8

manganese-doped zinc oxide

Mn-doped ZnO ZnO:Mn
Type Complex Compound
Formula
Role resistive switching layer
9

magnesium

Type Single Compound
Formula Mg
Role top electrode of memory device
10

BODIPY-FL propionic acid, Cy3.5 carboxylic acid, IR806-sensitized β-NaYF4:Yb3+,Tm3+/NaYF4 upconverting nanoparticles/2-(4-methoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine/poly(ethylene oxide)

multi-dye-sensitized UCNP/PAG/poly(ethylene oxide) multi-dye-sensitized UCNP/PAG/PEO
Type Nano Material
Formula
Role acid-generating layer
11

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cumulative probability plot of resistances of high resistance state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

References

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