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array of resistive random access memory device based on Cr/ZnO:Mn/Mg on Si transistor array

Based on

1 Articles
2017 Most recent source

Composition

1

poly(pyromellitic dianhydride-co-4,4'-oxydianiline)/silica

Type Complex Compound
Formula
Role substrate
2

single crystalline silicon

monocrystalline silicon silicon
Type Single Compound
Formula Si
Role channel layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

chromium

Type Single Compound
Formula Cr
Role source
5

chromium

Type Single Compound
Formula Cr
Role drain
6

chromium

Type Single Compound
Formula Cr
Role gate
7

chromium

Type Single Compound
Formula Cr
Role bottom electrode of memory device
8

manganese-doped zinc oxide

Mn-doped ZnO ZnO:Mn
Type Complex Compound
Formula
Role resistive switching layer
9

magnesium

Type Single Compound
Formula Mg
Role top electrode of memory device
10

BODIPY-FL propionic acid, Cy3.5 carboxylic acid, IR806-sensitized β-NaYF4:Yb3+,Tm3+/NaYF4 upconverting nanoparticles/2-(4-methoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine/poly(ethylene oxide)

multi-dye-sensitized UCNP/PAG/poly(ethylene oxide) multi-dye-sensitized UCNP/PAG/PEO
Type Nano Material
Formula
Role acid-generating layer
11

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role

Properties

General physical and chemical properties

Property Value Source
cumulative probability plot of resistances of high resistance state

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

References

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