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three-dimensional fin-structured carbon nanotube field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

boron p-doped silicon

boron-doped silicon
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single-walled carbon nanotube film

single-walled CNT film
Type Nano Material
Formula
Role semiconductor layer
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role gate
7

palladium

Type Single Compound
Formula Pd
Role source
8

palladium

Type Single Compound
Formula Pd
Role drain
9

PLL

Type
Formula
Role
10

gold

Type Single Compound
Formula Au
Role gate
11

gold

Type Single Compound
Formula Au
Role source
12

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
body factor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

References

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