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Mg0.25Ca0.75O/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

aluminium nitride

aluminum nitride
Type
Formula AlN
Role
4

aluminium gallium nitride

AlGaN
Type Single Compound
Formula Al0.26Ga0.74N
Role barrier layer
5

gallium nitride

Type Single Compound
Formula GaN
Role capping layer
6

magnesium calcium oxide

Type
Formula Mg0.25Ca0.75O
Role
7

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
8

Ti/Al/Ni/Au film

Type Nano Material
Formula
Role source
9

Ti/Al/Ni/Au film

Type Nano Material
Formula
Role drain
10

Ni/Au film

Ni/Au
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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