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Ag/SiO2/G/Pt resistive switching memory device

Based on

1 Articles
2016 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

platinum

Type Single Compound
Formula Pt
Role electrodes
4

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role switch
5

silver

Type Single Compound
Formula Ag
Role electrodes
6

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role barrier layer

Properties

General physical and chemical properties

Property Value Source
electric current dependent on process type

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
Product

Ag/SiO2/G/Pt resistive switching memory device

References

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