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graphene/p-GaN light emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

Mg doped gallium nitride

Mg doped GaN p-GaN
Type
Formula
Role
2

gold

Type Single Compound
Formula Au
Role Ohmic contacts
3

nickel

Type Single Compound
Formula Ni
Role Ohmic contacts
4

polyimide

Type
Formula
Role
5

multi-layer graphene sheets

multilayer graphene sheets four-layer thick graphene quadruple-layer graphene four-layered graphene multi-layer graphene multilayer graphene four layer graphene four-layer graphene tetralayer graphene quad-layer graphene few-layer graphene 4-layered graphene bilayer graphene 4-layer graphene 4 layer graphene graphene sheets 4L graphene graphene 4L Gr FLG 4LG QLG
Type
Formula
Role
6

sapphire

Type Single Compound
Formula Al2O3
Role substrate
7

nickel

Type Single Compound
Formula Ni
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-GaN/sapphire
Product

graphene/p-GaN light emitting diode

Size: not specified

Medium/Support: none

References

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