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top contact-top gate organic-inorganic perovskite field-effect transistors

Based on

1 Articles
2016 Most recent source

Composition

1

n-type Si/SiO2

Type Complex Compound
Formula
Role substrate
2

molybdenum suboxide

molybdenum oxide Mo-oxide
Type Single Compound
Formula MoO(x)
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

phenylethylammonium tin iodide

(C6H5C2H4NH3)2SnI4 PEASnI4
Type Single Compound
Formula C16H24I4N2Sn
Role semiconductor layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
7

CYTOP

Type Polymer
Formula
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-type Si
  • oxygen
Product

top contact-top gate organic-inorganic perovskite field-effect transistors

References

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