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resistive random-access memory switch

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon nitride

Type
Formula Si3N4
Role
3

platinum

Type Single Compound
Formula Pt
Role contact electrode
4

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role switching layer
5

hafnium

Type Single Compound
Formula Hf
Role reactive electrode
6

platinum

Type Single Compound
Formula Pt
Role contact electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current compliance curve

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon/silicon nitride wafer
  • platinum
Product

resistive random-access memory switch

Size: not specified

Medium/Support: none

References

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