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GaAs/AlGaAs multi-quantum well

Based on

1 Articles
2010 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

Al0.33Ga0.67As film

Type
Formula
Role
3

n-type silicon-doped GaAs/AlGaAs multi-quantum wells

n-type silicon-doped GaAs/AlGaAs MQW
Type
Formula
Role
4

Ge film

Type
Formula
Role
5

60 nm-thick gold layer

60 nm-thick gold layer 60 nm thick gold film gold thin film Au thin film gold layer gold film Au layer Au film
Type
Formula
Role
6

nickel thin film

nickel film Ni film
Type
Formula
Role
7

Au film

Type
Formula
Role
8

Ti film

Type
Formula
Role
9

Au film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
activation energy

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Applications

Area Application Source
lasers

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • silicon
  • arsenic
See all (5)
  1. IxFdIKzgkmCiA
Product

GaAs/AlGaAs multi-quantum well

References

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