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dynamically reconfigurable ambipolar black phosphorus memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

black phosphorus

phosphorus P black black P black-P b-P BP bP
Type Single Compound
Formula P
Role channel layer
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role charge-trapping layer
7

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge trapping rate dependent on back-gate voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

References

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