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MoS2/hBN field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

MoS2 flakes

Type Nano Material
Formula
Role semiconductor layer
4

h-BN nanosheets

Type Nano Material
Formula
Role tunneling layer
5

nickel

Type Single Compound
Formula Ni
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
contact resistance

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • molybdenum(IV) sulfide
  1. 4hulNbE6W0Z
Product

MoS2/hBN field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • molybdenum(IV) sulfide
  1. FgaaC7rPCrr
Product

MoS2/hBN field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • molybdenum(IV) sulfide
  1. Wqp8dbKZvq7
Product

MoS2/hBN field effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • molybdenum(IV) sulfide
  1. Byhgft2jCao
Product

MoS2/hBN field effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • molybdenum(IV) sulfide
  1. 85BUTHL5eBC
Product

MoS2/hBN field effect transistor

References

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