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single-layer MoS2 photoelectric memory device prepared with AuNP as charge-trapping layer

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role blocking gate dielectric
3

gold nanoparticles

AuNP
Type Nano Material
Formula
Role charge-trapping layer
4

crosslinked poly(4-vinylphenol)

cPVP
Type Polymer
Formula
Role tunneling gate dielectric layer
5

single-layer molybdenum disulfide

single-layer MoS2 flake single-layer MoS2 MoS2 flake MoS2 film
Type Nano Material
Formula
Role channel layer and light absorption layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
chopped gate voltage-induced photocurrent dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Source
light sensor for light at 655 nm

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Applications

Area Application Source
data storage

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

single-layer MoS2 photoelectric memory device prepared with AuNP as charge-trapping layer

References

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