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GQD-based resistor-type memory device

Based on

1 Articles
2016 Most recent source

Composition

1

Si/SiO2

Type
Formula
Role
2

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
3

graphene topological-normal heterostructured nanoribbon

GNR topological-normal heterostructure armchair graphene nanoribbon graphene nanoribbons graphene nanoribbon graphene ribbon GNR
Type Nano Material
Formula
Role electrodes
4

graphene quantum dot

GQD
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
electric current dependent on gate voltage

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

References

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