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graphene/boron nitride nanosheets/2,3-diaminonaphthalene-functionalized graphene quantum dots hybrid field-effect transistor photodetector

Based on

1 Articles
2016 Most recent source

Composition

1

heavily p-doped silicon

heavily p-doped Si
Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role channels
4

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
5

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain
6

boron nitride nanosheets

boronitrene nanosheets BN nanosheets BN NS BN-NS BNNS
Type Nano Material
Formula
Role buffer layer
7

diaminonaphthalene-functionalized graphene quantum dots

DAN-GQD
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. JvVu8C9SDistYgHBN0oDt2OnLAsC23XZ
Product

graphene/boron nitride nanosheets/2,3-diaminonaphthalene-functionalized graphene quantum dots hybrid field-effect transistor photodetector

Size: not specified

Medium/Support: none

References

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