Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

tunneling field effect transistor based on hydrogen-passivated phosphorene heterojunction with armchair edges

Based on

1 Articles
2016 Most recent source

Composition

1

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
2

hydrogen-passivated black phosphorus heterojunction with armchair edges

layered black phosphorus 2L-1L BP heterojunction AD BP heterojunction BP heterojunction phosphorene layered BP BP He
Type Nano Material
Formula
Role channel layer
3

layered black phosphorus

phosphorene bilayer BP layered BP
Type Nano Material
Formula
Role source
4

monolayer black phosphorus

monolayer BP phosphorene
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial