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tunneling field effect transistor based on hydrogen-passivated phosphorene heterojunction with armchair edges

Based on

1 Articles
2016 Most recent source

Composition

1

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
2

hydrogen-passivated black phosphorus heterojunction with armchair edges

layered black phosphorus 2L-1L BP heterojunction AD BP heterojunction BP heterojunction phosphorene layered BP BP He
Type Nano Material
Formula
Role channel layer
3

layered black phosphorus

phosphorene bilayer BP layered BP
Type Nano Material
Formula
Role source
4

monolayer black phosphorus

monolayer BP phosphorene
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
conduction band minimum at source-channel interface

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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