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graphene-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride nanosheet

hBN nanosheet
Type
Formula
Role
4

bilayer graphene

Type
Formula
Role
5

Cr/Au film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
longitudinal resistance dependent on magnetic field

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  1. U32tf4lL7bJvAqhGppmKdkA2pThf326YqXHq
Product

graphene-based field-effect transistor

References

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