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silicon/silica/AB-stacked bilayer graphene/hafnia/chromium/gold transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single-crystalline AB-stacked bilayer graphene

double-layer graphene system single-crystalline graphene AB-stacked bilayer graphene single-crystalline AB-BLG BLG on Cu film BLG on Cu BLG film AB-BLG BLG
Type Nano Material
Formula
Role channel layer
4

chromium-gold films

chromium-gold films chromium/gold film chromium/gold Cr-Au films Cr/Au film Cr/Au
Type Nano Material
Formula
Role source
5

chromium-gold films

chromium-gold films chromium/gold film chromium/gold Cr-Au films Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
7

chromium-gold films

chromium-gold films chromium/gold film chromium/gold Cr-Au films Cr/Au film Cr/Au
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

References

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