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TiN/NbOx/TiOy/NbOx/TiN memristor device

Based on

1 Articles
2016 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

tungsten

Type Single Compound
Formula W
Role contacts
3

silicon nitride/silicon dioxide

SiN/SiO2
Type Nano Material
Formula
Role dielectric layer
4

titanium nitride

Type Single Compound
Formula TiN
Role bottom electrode
5

niobium oxide

Type Complex Compound
Formula
Role blocking layer
6

oxygen deficient titanium(IV) oxide

substoichiometric titanium oxide oxygen deficient titanium oxide oxygen-deficient titanium oxide substoichiometric titanate oxygen-deficient titania oxygen vacancy titania reduced titanium oxide oxygen-rich titania titanium sub-oxide oxidized titanium titanium suboxide titanium oxide titanate titania
Type Single Compound
Formula TiO(x)
Role charge-trapping layer
7

niobium oxide

Type Complex Compound
Formula
Role tunneling layer
8

titanium nitride

Type Single Compound
Formula TiN
Role top electrode

Properties

General physical and chemical properties

Property Value Source
resistance switching current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • tungsten
Product

TiN/NbOx/TiOy/NbOx/TiN memristor device

References

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