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poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine]/nanogrooved SiO2-based organic field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n++-Si

Type Complex Compound
Formula
Role gate
2

nanogrooved SiO2 film

Type Nano Material
Formula
Role gate dielectrics
3

poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine]

PCDTPT
Type Polymer
Formula
Role semiconductor layer
4

nickel

Type Single Compound
Formula Ni
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

nickel

Type
Formula Ni
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/n++-Si
  1. 2b8Qa73U4GEfcGDV1h6x
Product

poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine]/nanogrooved SiO2-based organic field effect transistor

References

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